Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free acc.
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
Type
IPB039N04L G
IPP039N04L G
IPP039N04L G IPB039N04L G
40 V 3.9 mΩ 80 A
Package Marking
PG-TO263-3 039N04L
PG-TO220-3 039N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditi.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB039N04LG |
Infineon Technologies |
Power-Transistor | |
2 | IPB039N10N3 |
Infineon |
Power Transistor | |
3 | IPB039N10N3G |
Infineon Technologies AG |
Power-Transistor | |
4 | IPB031N08N5 |
INCHANGE |
N-Channel MOSFET | |
5 | IPB031N08N5 |
Infineon |
MOSFET | |
6 | IPB031NE7N3 |
INCHANGE |
N-Channel MOSFET | |
7 | IPB031NE7N3 |
Infineon |
Power Transistor | |
8 | IPB031NE7N3G |
Infineon Technologies AG |
Power-Transistor | |
9 | IPB033N10N5LF |
INCHANGE |
N-Channel MOSFET | |
10 | IPB034N03L |
Infineon |
Power-Transistor | |
11 | IPB034N03L |
INCHANGE |
N-Channel MOSFET | |
12 | IPB034N03LG |
Infineon Technologies AG |
OptiMOS3 Power-Transistor |