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IPB039N10N3 |
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| Part Number | IPB039N10N3 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C operating temperatur... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G IPB039N10N3 G Product Summary V DS R DS(on),max ID 100 V 3.9 mΩ 160 A Package Marking PG-TO263-7 039N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2... |
| Document |
 IPB039N10N3 Data Sheet
PDF 291.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB039N10N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 2 | IPB039N04L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPB039N04L |
Infineon |
Power-Transistor |
|
| 4 | IPB039N04LG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB031N08N5 |
INCHANGE |
N-Channel MOSFET |
|