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IPB039N04L |
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| Part Number | IPB039N04L |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t... |
| Features |
·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 400 PD Total Dissipation 94 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V ... |
| Document |
 IPB039N04L Data Sheet
PDF 215.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB039N04L |
Infineon |
Power-Transistor |
|
| 2 | IPB039N04LG |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB039N10N3 |
Infineon |
Power Transistor |
|
| 4 | IPB039N10N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 5 | IPB031N08N5 |
INCHANGE |
N-Channel MOSFET |
|