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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IPB019N06L3 ·APPLICATIONS ·Power supply ·Switching applications .
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IPB019N06L3
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous;Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20 120 480
PD
Total Dissipation
250
Tj
Operating Junction Temperature
175
Tstg
.
IPB019N06L3 - Infineon
Type IPB019N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimi.
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