IPB014N06N - Infineon Technologies

IPB014N06N Power Transistor

Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) IPB0.

Features

• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) IPB014N06N 60 V 1.4 mW 180 A 119 nC 106 nC Type IPB014N06N Package TO263-7 Marking 014N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V,T C=100 °C 180 A 180 V .