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IPB019N06L3 |
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| Part Number | IPB019N06L3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t... |
| Features |
·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IPB019N06L3 ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 120 480 PD Total Dissipation 250 Tj Operating Junction Temperature 175 Tstg ... |
| Document |
 IPB019N06L3 Data Sheet
PDF 248.62KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB019N06L3 |
Infineon |
Power Transistor |
|
| 2 | IPB019N06L3G |
Infineon Technologies |
Power Transistor |
|
| 3 | IPB019N08N3 |
Infineon |
Power Transistor |
|
| 4 | IPB019N08N3G |
Infineon Technologies |
Power Transistor |
|
| 5 | IPB010N06N |
Infineon |
MOSFET |
|