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Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformancePara.
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
1.7
mΩ
ID 120 A
Qoss 207 nC
QG(0V..10V)
178
nC
OptiMOSª5Power-Transistor,80V IPB017N08N5
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB017N08N5
Package P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB017N06N3 |
Infineon |
Power Transistor |
|
| 2 | IPB017N06N3G |
Infineon Technologies |
Power Transistor |
|
| 3 | IPB017N10N5 |
Infineon |
MOSFET |
|
| 4 | IPB017N10N5LF |
Infineon |
MOSFET |
|
| 5 | IPB010N06N |
Infineon |
MOSFET |
|
| 6 | IPB011N04L |
Infineon |
Power Transistor |
|
| 7 | IPB011N04LG |
Infineon Technologies |
Power Transistor |
|
| 8 | IPB011N04NF2S |
Infineon |
MOSFET |
|
| 9 | IPB011N04NG |
Infineon Technologies |
OptiMOS3 Power Transistor |
|
| 10 | IPB014N06N |
Infineon Technologies |
Power Transistor |
|
| 11 | IPB015N04L |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPB015N04L |
Infineon |
Power Transistor |
|