Type IPB017N06N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for targ.
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB017N06N3 G
Product Summary V DS R DS(on),max ID
60 V 1.7 mΩ 180 A
Package Marking
PG-TO263-7 017N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB017N06N3G |
Infineon Technologies |
Power Transistor | |
2 | IPB017N08N5 |
Infineon |
MOSFET | |
3 | IPB017N10N5 |
Infineon |
MOSFET | |
4 | IPB017N10N5LF |
Infineon |
MOSFET | |
5 | IPB010N06N |
Infineon |
MOSFET | |
6 | IPB011N04L |
Infineon |
Power Transistor | |
7 | IPB011N04LG |
Infineon Technologies |
Power Transistor | |
8 | IPB011N04NF2S |
Infineon |
MOSFET | |
9 | IPB011N04NG |
Infineon Technologies |
OptiMOS3 Power Transistor | |
10 | IPB014N06N |
Infineon Technologies |
Power Transistor | |
11 | IPB015N04L |
INCHANGE |
N-Channel MOSFET | |
12 | IPB015N04L |
Infineon |
Power Transistor |