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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedforwiderangeofapplications
•N-channel,normallevel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
1.5
mΩ
ID
195
A
Qoss
153
nC
QG (0V..10V)
155
nC
D²PAK
tab
2 1
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB015N06NF2S
Package PG-TO263-3
Marking 015N06NS
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2022-10-17
StrongIRFETTM2Power-Tr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB015N04L |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPB015N04L |
Infineon |
Power Transistor |
|
| 3 | IPB015N04LG |
Infineon Technologies |
Power Transistor |
|
| 4 | IPB015N04N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPB015N04N |
Infineon |
Power Transistor |
|
| 6 | IPB015N04NG |
Infineon Technologies |
Power Transistor |
|
| 7 | IPB015N08N5 |
Infineon |
MOSFET |
|
| 8 | IPB010N06N |
Infineon |
MOSFET |
|
| 9 | IPB011N04L |
Infineon |
Power Transistor |
|
| 10 | IPB011N04LG |
Infineon Technologies |
Power Transistor |
|
| 11 | IPB011N04NF2S |
Infineon |
MOSFET |
|
| 12 | IPB011N04NG |
Infineon Technologies |
OptiMOS3 Power Transistor |
|