IPB015N04NG - Infineon Technologies

IPB015N04NG Power Transistor

Type IPP015N04N G IPB015N04N G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS co.

Features

• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 Type IPB015N04N G IPP015N04N G 1) Product Summary V DS R DS(on),max ID 40 1.5 120 V mΩ A Package Marking PG-TO263-3 015N04N PG-TO220-3 015N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions .