. . . . . 1 Maximum ratings 3 Thermal characteristics .
•ExtremelylowlossesduetoverylowFOMRdson
*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
650
mΩ
Id. 9.9 A
Qg.t.
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPAN60R650CE ·FEATURES ·With TO-220F package ·Low input capacit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPAN60R800CE |
Infineon |
MOSFET | |
2 | IPAN60R800CE |
INCHANGE |
N-Channel MOSFET | |
3 | IPAN65R650CE |
Infineon |
MOSFET | |
4 | IPAN50R500CE |
Infineon |
MOSFET | |
5 | IPAN50R500CE |
INCHANGE |
N-Channel MOSFET | |
6 | IPAN80R280P7 |
Infineon |
Power-Transistor | |
7 | IPAN80R360P7 |
Infineon |
Power-Transistor | |
8 | IPAN80R450P7 |
Infineon |
Power-Transistor | |
9 | IPA028N08N3G |
Infineon Technologies |
Power-Transistor | |
10 | IPA029N06N |
Infineon |
MOSFET | |
11 | IPA029N06N |
INCHANGE |
N-Channel MOSFET | |
12 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET |