Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•ExtremelylowlossesduetoverylowFOMRdson
*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
650
mΩ
ID. 10.1 A
Qg..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPAN60R650CE |
Infineon |
MOSFET |
|
| 2 | IPAN60R650CE |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPAN60R800CE |
Infineon |
MOSFET |
|
| 4 | IPAN60R800CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPAN50R500CE |
Infineon |
MOSFET |
|
| 6 | IPAN50R500CE |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPAN80R280P7 |
Infineon |
Power-Transistor |
|
| 8 | IPAN80R360P7 |
Infineon |
Power-Transistor |
|
| 9 | IPAN80R450P7 |
Infineon |
Power-Transistor |
|
| 10 | IPA028N08N3G |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPA029N06N |
Infineon |
MOSFET |
|
| 12 | IPA029N06N |
INCHANGE |
N-Channel MOSFET |
|