Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features •Highvoltagete.
•Highvoltagetechnology
•Extremedv/dtrated
•Highpeakcurrentcapability
•Lowgatecharge
•Loweffectivecapacitances
•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound
•Qualifiedforconsumergradeapplications
Applications
LEDLightingandAdapterinQRFlybacktopology
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
TO-220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C RDS(on),max
800 310
V mΩ
Qg.typ
91
nC
ID,pul.
IPA80R310CE - INCHANGE
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA80R310CE ·FEATURES ·With TO-220F packaging ·With low gate dr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPA80R360P7 |
Infineon |
Power-Transistor |
|
| 2 | IPA80R1K0CE |
Infineon Technologies |
MOSFET |
|
| 3 | IPA80R1K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPA80R1K2P7 |
Infineon |
Power-Transistor |
|
| 5 | IPA80R1K4CE |
Infineon Technologies |
MOSFET |
|
| 6 | IPA80R1K4CE |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPA80R1K4P7 |
Infineon |
MOSFET |
|
| 8 | IPA80R280P7 |
Infineon |
MOSFET |
|
| 9 | IPA80R450P7 |
Infineon |
MOSFET |
|
| 10 | IPA80R460CE |
Infineon Technologies |
MOSFET |
|
| 11 | IPA80R460CE |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPA80R650CE |
Infineon Technologies |
MOSFET |
|