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IPA80R1K0CE - Infineon Technologies

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IPA80R1K0CE MOSFET

CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features •Highvoltagete.

Features


•Highvoltagetechnology
•Extremedv/dtrated
•Highpeakcurrentcapability
•Lowgatecharge
•Loweffectivecapacitances
•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound
•Qualifiedforconsumergradeapplications Applications LEDLightingforretrofitapplicationsinQRFlybacktopology Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. TO-220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 800 950 V mΩ Qg.typ .

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Datasheet IPA80R1K0CE - INCHANGE IPA80R1K0CE

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switchin.

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