IPA80R650CE - INCHANGE

IPA80R650CE N-Channel MOSFET

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA80R650CE ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

·With TO-220F package
·Low input capacitance and gate charge
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications INCHANGE Semiconductor IPA80R650CE
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 6 3.8 18 PD Total Dissipation @TC=25℃ 39 Tj Max. Operating Junction Temperature 150 Tstg S.