IPA80R310CE |
Part Number | IPA80R310CE |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA80R310CE ·FEATURES ·With TO-220F packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot varia... |
Features |
·With TO-220F packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 16.7 10.6 51 PD Total Dissipation 35 Tj Operating Junction Temperature -40~150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PAR... |
Document |
IPA80R310CE Data Sheet
PDF 197.57KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPA80R310CE |
Infineon Technologies |
MOSFET | |
2 | IPA80R360P7 |
Infineon |
Power-Transistor | |
3 | IPA80R1K0CE |
Infineon Technologies |
MOSFET | |
4 | IPA80R1K0CE |
INCHANGE |
N-Channel MOSFET | |
5 | IPA80R1K2P7 |
Infineon |
Power-Transistor |