IPA80R1K0CE |
Part Number | IPA80R1K0CE |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations fo... |
Features |
·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA80R1K0CE ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 5.7 3.6 18 PD Total Dissipation @TC=25℃ 32 Tj Max. Operating Junction Temperature 150 Tstg ... |
Document |
IPA80R1K0CE Data Sheet
PDF 197.27KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPA80R1K0CE |
Infineon Technologies |
MOSFET | |
2 | IPA80R1K2P7 |
Infineon |
Power-Transistor | |
3 | IPA80R1K4CE |
Infineon Technologies |
MOSFET | |
4 | IPA80R1K4CE |
INCHANGE |
N-Channel MOSFET | |
5 | IPA80R1K4P7 |
Infineon |
MOSFET |