ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). T.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 9 mA2) 3)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDW20G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
2 | IDW20G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
3 | IDW20C65D2 |
Infineon |
Diode | |
4 | IDW24G65C5B |
Infineon |
Silicon Carbide Diode | |
5 | IDW100E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
6 | IDW10G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
7 | IDW10G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
8 | IDW12G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
9 | IDW15E65D2 |
Infineon |
Diode | |
10 | IDW15G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
11 | IDW16G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
12 | IDW30C65D1 |
Infineon |
Diode |