IDW20G120C5B - Infineon

IDW20G120C5B Silicon Carbide Schottky Diode

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Features

 Revolutionary semiconductor material - Silicon Carbide
 No reverse recovery current / No forward recovery
 Temperature independent switching behavior
 Low forward voltage even at high operating temperature
 Tight forward voltage distribution
 Excellent thermal performance
 Extended surge current capability
 Specified dv/dt ruggedness
 Qualified according to JEDEC1) for target applications
 Pb-free lead plating; RoHS compliant 1 2 CASE 3 Benefits
 System efficiency improvement over Si diodes
 Enabling higher frequency / increased power density solutions
 System size/cost sa.