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IDW20G65C5B |
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| Part Number | IDW20G65C5B |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of ... |
| Features |
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 9 mA2) 3) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability ... |
| Document |
 IDW20G65C5B Data Sheet
PDF 731.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IDW20G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes |
|
| 2 | IDW20G120C5B |
Infineon |
Silicon Carbide Schottky Diode |
|
| 3 | IDW20C65D2 |
Infineon |
Diode |
|
| 4 | IDW24G65C5B |
Infineon |
Silicon Carbide Diode |
|
| 5 | IDW100E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode |
|