IDW24G65C5B - Infineon

IDW24G65C5B Silicon Carbide Diode

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). T.

Features

 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC1) for target applications
 Breakdown voltage tested at 9 mA2)3)
 Optimized for high temperature operation Benefits
 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliability d.