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IDW20G120C5B |
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| Part Number | IDW20G120C5B |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | . ...2 Table of Contents..... |
| Features |
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant 1 2 CASE 3 Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost sa... |
| Document |
 IDW20G120C5B Data Sheet
PDF 687.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IDW20G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes |
|
| 2 | IDW20G65C5B |
Infineon |
Silicon Carbide Diode |
|
| 3 | IDW20C65D2 |
Infineon |
Diode |
|
| 4 | IDW24G65C5B |
Infineon |
Silicon Carbide Diode |
|
| 5 | IDW100E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode |
|