3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • B.
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC< 130 °C
IDH05SG60C
600 V 6 nC 5A
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDH05S120 |
Infineon Technologies |
Schottky Diode | |
2 | IDH05S60C |
Infineon Technologies |
Schottky Diode | |
3 | IDH05G120C5 |
Infineon |
Silicon Carbide Schottky Diode | |
4 | IDH05G65C5 |
Infineon |
Silicon Carbide Diode | |
5 | IDH02G120C5 |
Infineon |
Diode | |
6 | IDH02G65C5 |
Infineon |
650V SiC Schottky Diode | |
7 | IDH02SG120 |
Infineon Technologies |
Schottky Diode | |
8 | IDH03G65C5 |
Infineon |
Silicon Carbide Diode | |
9 | IDH03SG60C |
Infineon Technologies |
Schottky Diode | |
10 | IDH04G65C5 |
Infineon |
Silicon Carbide Diode | |
11 | IDH04G65C6 |
Infineon |
SiC Schottky Diode | |
12 | IDH04S60C |
Infineon Technologies |
Schottky Diode |