...........2 Table of Contents.3 Maximum Ratings ............
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDH05G65C5 |
Infineon |
Silicon Carbide Diode | |
2 | IDH05S120 |
Infineon Technologies |
Schottky Diode | |
3 | IDH05S60C |
Infineon Technologies |
Schottky Diode | |
4 | IDH05SG60C |
Infineon Technologies |
Schottky Diode | |
5 | IDH02G120C5 |
Infineon |
Diode | |
6 | IDH02G65C5 |
Infineon |
650V SiC Schottky Diode | |
7 | IDH02SG120 |
Infineon Technologies |
Schottky Diode | |
8 | IDH03G65C5 |
Infineon |
Silicon Carbide Diode | |
9 | IDH03SG60C |
Infineon Technologies |
Schottky Diode | |
10 | IDH04G65C5 |
Infineon |
Silicon Carbide Diode | |
11 | IDH04G65C6 |
Infineon |
SiC Schottky Diode | |
12 | IDH04S60C |
Infineon Technologies |
Schottky Diode |