IDH05S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target.
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
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Product Summary V DC Qc IF 600 12 5 V nC A
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives Type IDH05S60C Package PG-TO220-2 Marking D05S60C Pin 1 C Pin 2 A
Maximum ratings, at T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDH05S120 |
Infineon Technologies |
Schottky Diode | |
2 | IDH05SG60C |
Infineon Technologies |
Schottky Diode | |
3 | IDH05G120C5 |
Infineon |
Silicon Carbide Schottky Diode | |
4 | IDH05G65C5 |
Infineon |
Silicon Carbide Diode | |
5 | IDH02G120C5 |
Infineon |
Diode | |
6 | IDH02G65C5 |
Infineon |
650V SiC Schottky Diode | |
7 | IDH02SG120 |
Infineon Technologies |
Schottky Diode | |
8 | IDH03G65C5 |
Infineon |
Silicon Carbide Diode | |
9 | IDH03SG60C |
Infineon Technologies |
Schottky Diode | |
10 | IDH04G65C5 |
Infineon |
Silicon Carbide Diode | |
11 | IDH04G65C6 |
Infineon |
SiC Schottky Diode | |
12 | IDH04S60C |
Infineon Technologies |
Schottky Diode |