IDH03G65C5 - Infineon

IDH03G65C5 Silicon Carbide Diode

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resultin.

Features

 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC1) for target applications
 Breakdown voltage tested at 6.8 mA2)
 Optimized for high temperature operation Benefits
 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliabilit.