IAUC64N08S5L075 - Infineon

IAUC64N08S5L075 Power Transistor

OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC64N08S5L075 Product Summary VDS RDS(on),max 80 V 7.5 mW ID 64 A PG-TDSON-8-33 1 1 Type IAUC64N.

Features

• OptiMOS™ power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• MSL1 up to 260°C peak reflow
• 175 °C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested IAUC64N08S5L075 Product Summary VDS RDS(on),max 80 V 7.5 mW ID 64 A PG-TDSON-8-33 1 1 Type IAUC64N08S5L075 Package PG-TDSON-8-33 Marking 5N08L075 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS V GS=10V, DC .