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IAUC64N08S5L075 |
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| Part Number | IAUC64N08S5L075 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Gr... |
| Features |
• OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC64N08S5L075 Product Summary VDS RDS(on),max 80 V 7.5 mW ID 64 A PG-TDSON-8-33 1 1 Type IAUC64N08S5L075 Package PG-TDSON-8-33 Marking 5N08L075 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS V GS=10V, DC ... |
| Document |
 IAUC64N08S5L075 Data Sheet
PDF 1.24MB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IAUC60N04S6L030H |
Infineon |
Power Transistor |
|
| 2 | IAUC60N04S6L039 |
Infineon |
Power Transistor |
|
| 3 | IAUC60N04S6L045H |
Infineon |
Power Transistor |
|
| 4 | IAUC60N04S6N031H |
Infineon |
Power Transistor |
|
| 5 | IAUC60N04S6N050H |
Infineon |
Power Transistor |
|