IAUC60N04S6N031H - Infineon

IAUC60N04S6N031H Power Transistor

IAUC60N04S6N031H OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 3.1 mW 60 A PG-TDSON-8-56 • Half-Bridge - N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) .

Features

• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 3.1 mW 60 A PG-TDSON-8-56
• Half-Bridge - N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested Type Package Marking IAUC60N04S6N031H PG-TDSON-8-56 6N04N031 Maximum ratings per channel, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage.