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IAUC60N04S6N031H |
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| Part Number | IAUC60N04S6N031H |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IAUC60N04S6N031H OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 3.1 mW 60 A PG-TDSON-8-56 • Half-Bridge - N-c... |
| Features |
• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 3.1 mW 60 A PG-TDSON-8-56 • Half-Bridge - N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IAUC60N04S6N031H PG-TDSON-8-56 6N04N031 Maximum ratings per channel, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage... |
| Document |
 IAUC60N04S6N031H Data Sheet
PDF 907.33KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IAUC60N04S6N050H |
Infineon |
Power Transistor |
|
| 2 | IAUC60N04S6L030H |
Infineon |
Power Transistor |
|
| 3 | IAUC60N04S6L039 |
Infineon |
Power Transistor |
|
| 4 | IAUC60N04S6L045H |
Infineon |
Power Transistor |
|
| 5 | IAUC60N06S5L073 |
Infineon |
Power Transistor |
|