DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5117800BSJ-50/-60/-70 2M x 8-DRAM P-SOJ-28-3 (400mil) VCC I/O1 I/O2 I/O3 I/O4 WE RAS N.C. A10 A0 A1 A2 A3 VCC O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VSS I/O8 I/O7 I/O6 I/O5 CAS OE A9 A8 A7 A6 A5 A4 .
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5117800BSJ-50 HYB 5117800BSJ-60 HYB 5117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering Code Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 Package P-SOJ-28-3 P-SOJ-28-3 P-SOJ-28-3 400 mil 400 mil 400 mil Descriptions DRAM (access time 50 ns) DRA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HYB5117800BSJ-60 |
Siemens |
2M x 8-Bit Dynamic RAM | |
2 | HYB5117800BSJ-70 |
Siemens |
2M x 8-Bit Dynamic RAM | |
3 | HYB5117805BJ-50 |
Siemens |
2M x 8 - Bit Dynamic RAM 2k Refresh | |
4 | HYB5117805BJ-60 |
Siemens |
2M x 8 - Bit Dynamic RAM 2k Refresh | |
5 | HYB5117805BJ-70 |
Siemens |
2M x 8 - Bit Dynamic RAM 2k Refresh | |
6 | HYB5117805BSJ-50 |
Siemens |
2M x 8-Bit Dynamic RAM 2k Refresh | |
7 | HYB5117805BSJ-60 |
Siemens |
2M x 8-Bit Dynamic RAM 2k Refresh | |
8 | HYB5117400BJ-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
9 | HYB5117400BJ-60 |
Siemens |
4M x 4-Bit Dynamic RAM | |
10 | HYB5117400BJ-70 |
Siemens |
4M x 4-Bit Dynamic RAM | |
11 | HYB5117400BT-50 |
Siemens |
4M x 4-Bit Dynamic RAM | |
12 | HYB5117400BT-60 |
Siemens |
4M x 4-Bit Dynamic RAM |