HYB5117400BJ-60 - Siemens

HYB5117400BJ-60 4M x 4-Bit Dynamic RAM

Semiconductor Group 2 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Pin Names HYB 5(3)116400 4k-Refresh Row Address Inputs Column Address Inputs Row Address Strobe Column Address Strobe Output Enable Data Input/Output Read/Write Input Power Supply Ground (0 V) Not Connected Pin Configuration P-SOJ-26/24-1 300 mil P-TSOPII-26/.

Features

s) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil Semiconductor Group 1 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM The HYB 5(3)116(7)400 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)400 to be packag.