DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5117400BJ/BT-50/-60/-70 4M x 4-DRAM Vcc I/O1 I/O2 WE RAS N.C. A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 Vss I/O4 I/O3 CA.
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5117400BJ-50 HYB 5117400BJ-60 HYB 5117400BJ-70 HYB 5117400BT-50 HYB 5117400BT-60 HYB 5117400BT-70 Pin Names A0 to A10 A0 to A10 RAS OE I/O1-I/O4 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering Code Q67100-Q1086 Q67100-Q1087 Q67100-Q1088 on request on request on request Package P-SOJ-26/24 300 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HYB5117400BJ-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
2 | HYB5117400BJ-60 |
Siemens |
4M x 4-Bit Dynamic RAM | |
3 | HYB5117400BT-50 |
Siemens |
4M x 4-Bit Dynamic RAM | |
4 | HYB5117400BT-60 |
Siemens |
4M x 4-Bit Dynamic RAM | |
5 | HYB5117400BT-70 |
Siemens |
4M x 4-Bit Dynamic RAM | |
6 | HYB5117405BJ-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
7 | HYB5117405BJ-60 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
8 | HYB5117405BJ-70 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
9 | HYB5117405BT-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
10 | HYB5117405BT-60 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
11 | HYB5117405BT-70 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
12 | HYB5117800BSJ-50 |
Siemens |
2M x 8-Bit Dynamic RAM |