HYB5116405BJ-60 - Siemens

HYB5116405BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 50 ns LP-EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 60 ns LP-EDO-DRAM HYB 3116405BTL-50 on request HYB 3116405BTL-60 on request Semiconductor G.

Features

, RAS-only refresh, hidden refresh, test mode and Self Refresh (on L-versions only)
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil Semiconductor Group 1 1998-10-01 HYB 5116(7)405BJ-50/-60 HYB 3116(7)405BJ/BT(L)-50/-60 4M × 4 EDO-DRAM The HYB 5(3)116(7)405 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techni.