DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB5116(7)405BJ/BT-5.
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5116405BT-50 HYB 5116405BT-60 HYB 5116405BT-70 HYB 5117405BJ-50 HYB 5117405BJ-60 HYB 5117405BJ-70 HYB 5117405BT-50 HYB 5117405BT-60 HYB 5117405BT-70 Pin Names A0-A11 A0-A9 A0-A10 RAS OE I/O1-I/O4 CAS WE Row Address Inputs for HYB5116405 Column Address Inputs for HYB5116405 Row and Column Address Inputs for HYB5117405 Row Address Strobe Output Enable Data Input/Output Column Address Strob.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HYB5116405BJ-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
2 | HYB5116405BJ-60 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
3 | HYB5116405BT-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
4 | HYB5116405BT-60 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
5 | HYB5116405BT-70 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
6 | HYB5116400BJ-50 |
Siemens |
4M x 4-Bit Dynamic RAM | |
7 | HYB5116400BJ-60 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
8 | HYB5116400BJ-70 |
Siemens |
4M x 4-Bit Dynamic RAM | |
9 | HYB5116400BT-50 |
Siemens |
4M x 4-Bit Dynamic RAM | |
10 | HYB5116400BT-60 |
Siemens |
4M x 4-Bit Dynamic RAM | |
11 | HYB5116400BT-70 |
Siemens |
4M x 4-Bit Dynamic RAM | |
12 | HYB5116160BSJ-50 |
Siemens |
1M x 16-Bit Dynamic RAM |