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HYB5116405BJ-60 |
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| Part Number | HYB5116405BJ-60 |
| Manufacturer | Siemens |
| Description | P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM P-TSOPII-26/2... |
| Features |
, RAS-only refresh, hidden refresh, test mode and Self Refresh (on L-versions only) • All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible • Plastic Package: P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil Semiconductor Group 1 1998-10-01 HYB 5116(7)405BJ-50/-60 HYB 3116(7)405BJ/BT(L)-50/-60 4M × 4 EDO-DRAM The HYB 5(3)116(7)405 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techni... |
| Document |
 HYB5116405BJ-60 Data Sheet
PDF 143.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HYB5116405BJ-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
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| 2 | HYB5116405BJ-70 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
|
| 3 | HYB5116405BT-50 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
|
| 4 | HYB5116405BT-60 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
|
| 5 | HYB5116405BT-70 |
Siemens |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
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