HYB5116400BJ-60 - Siemens

HYB5116400BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5116400BJ/BT-50/-60/-70 4M x 4-DRAM Vcc I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 Vss I/O4 I/O3 CAS.

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116400BJ-50 HYB 5116400BJ-60 HYB 5116400BJ-70 HYB 5116400BT-50 HYB 5116400BT-60 HYB 5116400BT-70 Pin Names A0-A11 A0-A9 RAS OE I/O1-I/O4 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering Code Q67100-Q1049 Q67100-Q1050 Q67100-Q1051 on request on request on request Package P-SOJ-26/24 300 mil P-S.