Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.0/Apr. 2003 1 DataSheet4U.com www.DataSheet4U.com HY5DU28422D(L)T HY5DU28822D(L)T HY5DU281622D(L)T Revision History 1. Rev 0.0 (Apr. 2003) 1) Datasheet Release in Preliminary version et4U.c.
•
•
•
•
•
•
• VDD, VDDQ = 2.6V +/- 0.1V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
•
•
•
• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable /CAS latency 2 / 2.5/ 3 supported Programmable burst length 2 / 4 / 8 with both sequential and interleave mode Internal four bank operations with single pulsed /RAS
et4U.com
•
•
x16 device has two byte.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY5DU281622 |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|
| 2 | HY5DU281622AT |
Hynix Semiconductor |
(HY5DU28xxxAT) 3rd 128M DDR SDRAM |
|
| 3 | HY5DU281622AT-6 |
Hynix Semiconductor |
128M(8Mx16) DDR SDRAM |
|
| 4 | HY5DU281622ET |
Hynix Semiconductor |
128M(8Mx16) GDDR SDRAM |
|
| 5 | HY5DU281622FTP |
Hynix |
128Mb DDR SDRAM |
|
| 6 | HY5DU281622LT |
Hynix Semiconductor |
(HY5DU28xxxAT) 3rd 128M DDR SDRAM |
|
| 7 | HY5DU281622LT |
Hynix Semiconductor |
(HY5DU28xx22D(L)T) 128Mb-S DDR SDRAM |
|
| 8 | HY5DU281622LT-H |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|
| 9 | HY5DU281622LT-K |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|
| 10 | HY5DU281622LT-L |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|
| 11 | HY5DU281622T |
Hynix Semiconductor |
2nd 128M DDR SDRAM |
|
| 12 | HY5DU281622T-H |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM |
|