HY5DU281622DT |
Part Number | HY5DU281622DT |
Manufacturer | Hynix Semiconductor |
Description | and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.0/Apr. 2003 1 DataSheet4U.com ww... |
Features |
• • • • • • • VDD, VDDQ = 2.6V +/- 0.1V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • • • • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable /CAS latency 2 / 2.5/ 3 supported Programmable burst length 2 / 4 / 8 with both sequential and interleave mode Internal four bank operations with single pulsed /RAS et4U.com • • x16 device has two byte... |
Document |
HY5DU281622DT Data Sheet
PDF 560.43KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HY5DU281622 |
Hyundai |
4 Banks x 2M x 16Bit Double Data Rate SDRAM | |
2 | HY5DU281622AT |
Hynix Semiconductor |
(HY5DU28xxxAT) 3rd 128M DDR SDRAM | |
3 | HY5DU281622AT-6 |
Hynix Semiconductor |
128M(8Mx16) DDR SDRAM | |
4 | HY5DU281622ET |
Hynix Semiconductor |
128M(8Mx16) GDDR SDRAM | |
5 | HY5DU281622FTP |
Hynix |
128Mb DDR SDRAM |