HSM276SR - Hitachi Semiconductor

HSM276SR Silicon Schottky Barrier Diode

HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-040D (Z) Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2.

Features

• High forward current, Low capacitance.
• HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276SR Laser Mark C9 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average forward current Junction temperature Storage temperature Note: Per one device Symbol VR I O
* Tj Tstg Value 3 30 125
  –55 to +125 Unit V mA °C °C HSM276SR Elect.