HSM226S - Renesas Technology

HSM226S Silicon Schottky Barrier Diode

www.DataSheet4U.com HSM226S Silicon Schottky Barrier Diode for High speed switching REJ03G0057-0100Z Rev.1.00 Jan.21.2004 Features • Low reverse current, Low capacitance. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM226S Laser Mark S22 Package Code MPAK Pin Arrangement 3 1. Cathode.

Features

• Low reverse current, Low capacitance.
• MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM226S Laser Mark S22 Package Code MPAK Pin Arrangement 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00, Jan.21.2004, page 1 of 4 HSM226S Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Notes: 1. 10 ms sine wave 1 pulse 2. Two device total Symbol VRRM Value 25 1 2 Unit V mA mA °C °C IFS.