HSM276S - Hitachi Semiconductor

HSM276S Silicon Schottky Barrier Diode

HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E (Z) Rev 5 Jul 1998 Features • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276S .

Features

• High forward current, Low capacitance.
• HSM276S which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276S Laser Mark C2 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM276S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125
  –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°.