HSM276ASR - Hitachi Semiconductor

HSM276ASR Silicon Schottky Barrier Diode

HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840(Z) Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM27.

Features

• High forward current, Low capacitance.
• HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276ASR Laser Mark S20 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HSM276ASR Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note: Per one device Symbol VRRM VR IO
* Value 5 3 30 125 -55 .