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High-definition CRT display video output, wide-band amplifier applications. Features • High fT: 500MHz • High breakdown voltage: VCEO=120V min • Small reverse transfer capacitance TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ..............
• High fT: 500MHz
• High breakdown voltage: VCEO=120V min
• Small reverse transfer capacitance
TO-92
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ..... 150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) ......
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HSC3953 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HSC300 |
TE |
Aluminium Housed Power Resistors |
|
| 3 | HSC3000 |
JYH Battery |
Sealed rechargeable Ni-MH cylindrical cell |
|
| 4 | HSC3417 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HSC100 |
TE |
Aluminium Housed Power Resistors |
|
| 6 | HSC106D |
SemiHow |
Silicon Controlled Rectifier |
|
| 7 | HSC106M |
SemiHow |
Silicon Controlled Rectifier |
|
| 8 | HSC119 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for High Speed Switching |
|
| 9 | HSC150 |
TE |
Aluminium Housed Power Resistors |
|
| 10 | HSC1815 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | HSC1959 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 12 | HSC1959SP |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|