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The HSC1959Y is designed for audio frequency Low power amplifier applications. Features • Execellent hFE linearity • Complementary to HSA562 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .. -55 ~ +150 °C Junction Temperature .......
• Execellent hFE linearity
• Complementary to HSA562
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature .. 150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ... 500 mW
• Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage .....
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HSC1959 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HSC100 |
TE |
Aluminium Housed Power Resistors |
|
| 3 | HSC106D |
SemiHow |
Silicon Controlled Rectifier |
|
| 4 | HSC106M |
SemiHow |
Silicon Controlled Rectifier |
|
| 5 | HSC119 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for High Speed Switching |
|
| 6 | HSC150 |
TE |
Aluminium Housed Power Resistors |
|
| 7 | HSC1815 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 8 | HSC200 |
TE |
Aluminium Housed Power Resistors |
|
| 9 | HSC2228Y |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 10 | HSC2240 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | HSC226 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 12 | HSC226 |
SEMTECH |
Silicon Schottky Barrier Diode |
|