Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control, process and remote control, and warning systems where reliability of operation is important. Dec 2014 VDRM = 400V / 600 V IT(RMS) = 4.0A Symbol 2.Anode 1.Cathode 3.Gate TO-126 1. K 2. A 3. G 1 2 3 HSC106D/M Absolute Maximum Ratings (T.
Repetitive Peak Off-State Voltage (VDRM=400V/600V) R.M.S On-State Current (IT(RMS)=4.0A) Average On-State Current (IT(AV)=2.55A) General Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control, process and remote control, and warning systems where reliability of operation is important. Dec 2014 VDRM = 400V / 600 V IT(RMS) = 4.0A Symbol 2.Anode 1.Cathode 3.Gate TO-126 1. K 2. A 3. G 1 2 3 HSC106D/M Absolute Maximum Ratings (Ta=25℃) Symbol Parameter VDRM Repetitive Peak Off-State Voltage (Forward) HSC106D .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HSC106M |
SemiHow |
Silicon Controlled Rectifier | |
2 | HSC100 |
TE |
Aluminium Housed Power Resistors | |
3 | HSC119 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for High Speed Switching | |
4 | HSC150 |
TE |
Aluminium Housed Power Resistors | |
5 | HSC1815 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | HSC1959 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
7 | HSC1959SP |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
8 | HSC200 |
TE |
Aluminium Housed Power Resistors | |
9 | HSC2228Y |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
10 | HSC2240 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
11 | HSC226 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
12 | HSC226 |
SEMTECH |
Silicon Schottky Barrier Diode |