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HI-SINCERITY MICROELECTRONICS CORP. HSC3417 NPN Epitaxial Planar Transistor Spec. No. : HE6618 Issued Date : 1994.05.12 Revised Date : 2006.07.27 Page No. : 1/4 Features • High Definition CRT Display Video Output Applications • High Breakdown Voltage: BVCEO=300V TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature........
• High Definition CRT Display Video Output Applications
• High Breakdown Voltage: BVCEO=300V
TO-126ML
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures Storage Temperature.. -50 ~ +150 °C Junction Temperature +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HSC300 |
TE |
Aluminium Housed Power Resistors |
|
| 2 | HSC3000 |
JYH Battery |
Sealed rechargeable Ni-MH cylindrical cell |
|
| 3 | HSC3953 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HSC3953S |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HSC100 |
TE |
Aluminium Housed Power Resistors |
|
| 6 | HSC106D |
SemiHow |
Silicon Controlled Rectifier |
|
| 7 | HSC106M |
SemiHow |
Silicon Controlled Rectifier |
|
| 8 | HSC119 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for High Speed Switching |
|
| 9 | HSC150 |
TE |
Aluminium Housed Power Resistors |
|
| 10 | HSC1815 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | HSC1959 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 12 | HSC1959SP |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|