HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch ADE-208-413 (Z) Rev. 0 Dec. 1995 Features • Low forward resistance. (rf = 0.7 max) • Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC277 Cathode Mark Laser Package Code UFP Outline Cathode mark 1 2 1. Cathode 2. Anode Absolute Max.
• Low forward resistance. (rf = 0.7 max)
• Ultra small F lat P ackage (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC277 Cathode Mark Laser Package Code UFP
Outline
Cathode mark
1
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Junction temperature Power dissipation Operation temperature Storage temperature Symbol VR Tj Pd Topr Tstg Value 35 125 150
–20 to +60
–45 to +125 Unit V °C mW °C °C
HSC277
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Symbol V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HSC276 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Mixer | |
2 | HSC276A |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Mixer | |
3 | HSC278 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
4 | HSC200 |
TE |
Aluminium Housed Power Resistors | |
5 | HSC2228Y |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | HSC2240 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
7 | HSC226 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
8 | HSC226 |
SEMTECH |
Silicon Schottky Barrier Diode | |
9 | HSC226 |
Kexin |
Silicon Schottky Barrier Diode | |
10 | HSC226 |
Renesas |
Silicon Schottky Barrier Diode | |
11 | HSC250 |
TE |
Aluminium Housed Power Resistors | |
12 | HSC2625 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |