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HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings.
• High forward current, Low capacitance.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC276 Laser Mark C2 Package Code UFP
Outline
Cathode mark Mark 1
C2
2 1. Cathode 2. Anode
HSC276
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability
*1
Symbol VR IR IF C —
Min 3 — 35 — 30
Typ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HSC276A |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Mixer |
|
| 2 | HSC277 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch |
|
| 3 | HSC278 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 4 | HSC200 |
TE |
Aluminium Housed Power Resistors |
|
| 5 | HSC2228Y |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | HSC2240 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | HSC226 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 8 | HSC226 |
SEMTECH |
Silicon Schottky Barrier Diode |
|
| 9 | HSC226 |
Kexin |
Silicon Schottky Barrier Diode |
|
| 10 | HSC226 |
Renesas |
Silicon Schottky Barrier Diode |
|
| 11 | HSC250 |
TE |
Aluminium Housed Power Resistors |
|
| 12 | HSC2625 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|