Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-3P • Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature.............
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HSC2682 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HSC200 |
TE |
Aluminium Housed Power Resistors |
|
| 3 | HSC2228Y |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HSC2240 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HSC226 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 6 | HSC226 |
SEMTECH |
Silicon Schottky Barrier Diode |
|
| 7 | HSC226 |
Kexin |
Silicon Schottky Barrier Diode |
|
| 8 | HSC226 |
Renesas |
Silicon Schottky Barrier Diode |
|
| 9 | HSC250 |
TE |
Aluminium Housed Power Resistors |
|
| 10 | HSC276 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Mixer |
|
| 11 | HSC276A |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Mixer |
|
| 12 | HSC277 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch |
|